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IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 60 A
R G = 3.3 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
45
60
6300
950
190
25
24
96
25
180
44
90
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.21 ° C/W
R thCS
R thCS
TO-247 and TO-3P
TO-264
0.21
0.15
° C/W
° C/W
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25 A, -di/dt = 100 A/ μ s
V R = 100 V, V GS = 0 V
250
3.3
88
220
1.5
A
A
V
ns
μ C
Characteristic Curves
90
Fig. 1. Output Characteristics
@ 25 o C
200
Fig. 2. Extended Output Characteristics
@ 25 o C
80
70
60
V GS = 10V
9V
8V
180
160
140
V GS = 10V
9V
8V
50
40
30
20
10
0
7V
6V
5V
120
100
80
60
40
20
0
7V
6V
5V
0
0.5
1
1.5 2
V D S - Volts
2.5
3
3.5
4
0
2
4
6
8 10 12
V D S - Volts
14
16
18
20
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
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